Welcome to FengYuan Metallurgical Materials Co., Ltd.

how to use silicon carbide chlorine

Etching process of silicon carbide from polysiloxane …

Etching process of silicon carbide from polysiloxane by chlorine. Author links open overlay panel Duan Liqun Ma Qingsong Chen Zhaohui. Etching process of SiC from polysiloxane by chlorine was investigated. We use cookies to help provide and enhance our service and tailor content and ads.

Chloride-Based CVD Growth of Silicon Carbide for

2011-12-2 · Abstract: Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power appliions. An active SiC layer is usually fabried using halide-assisted chemical vapor deposition (CVD). In this work, we use quantum chemical

Silicon Carbide Patents and Patent Appliions (Class …

Abstract: Provided is a silicon carbide ceramic having a small amount of resistivity change due to temperature change and being capable of generating heat by current appliion; and containing silicon carbide crystals having 0.1 to 25 mass % of 4H—SiC silicon carbide crystals and 50 to 99.9 mass % of 6H—SiC silicon carbide crystals

Characteristics of silicon carbide heating elements

2018-11-16 · Silicon carbon rod is made of high purity green six-party silicon carbide as main raw materials, processing according to certain material than blocking, the recrystallization silicide 2200 ℃ high temperature sintering and rod, tube made of high temperature electric heating element, not of metal. Oxidizing atmosphere in normal temperature can reach 1450 ℃, continuous use of up to 2000 hours.

Silicon carbide - Wikipedia

2019-4-13 · Silicon carbide (SiC), also known as carborundum / k ɑːr b ə ˈ r ʌ n d əm /, is a semiconductor containing silicon and carbon.It occurs in nature as the extremely rare mineral moissanite.Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive.Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in …

Chloride-based CVD growth of silicon carbide for

A study was conducted to demonstrate chloride-based chemical vapor deposition (CVD) growth of silicon carbide (SiC) for electronic appliions. SiC homoepitaxial growth was done using CVD with silane (SiH 4) as the silicon precursor and light hydrocarbons, including ethylene (C 2 H 4) or propane (C 3 H 8) as the carbon precursor. Simulation

Gas-Phase Modeling of Chlorine-Based Chemical …

2017-7-12 · Kinetic calculations of the chemical phenomena occurring in the epitaxial growth of silicon carbide are performed in this study. The main process parameters analyzed are precursor types, growth temperature, Cl/Si ratio, and precursors’ concentration. The analysis of the gas-phase reactions resulted in a model which could explain most of the already reported experimental results, performed in

US5611955A - High resistivity silicon carbide …

A substrate for use in semiconductor devices, fabried of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected heavy metal, hydrogen, chlorine and fluorine. The selected heavy metal being a metal found in periodic

Deep Reactive Ion Etching for Bulk Micromachiningof Silicon

2012-3-3 · ©00byCRCPressLLC1DeepReactiveIonEtchingforBulkMicromachiningofSiliconCarbide1.11.1.3IntroductionFundamentalsofHigh …

Standard-compliant element analysis of silicon carbide …

2014-10-7 · Standard-compliant element analysis of silicon carbide and mixtures containing silicon carbide with characteristic of SiC is its resistance against chlorine and strong acids, also at high temperatures. Thanks to a hardness of 9.6 Mohs, it is also specifies the use of a quartz tube (as is used, for example, in Eltra’s CW-

Synthesis and characteristics of chloroform-treated

Those results showed that chloroform-treated CDCs overcome the present limitations imposed by the conventional use of chlorine gas, leading to enhanced tribological properties. Synthesis and characteristics of chloroform-treated silicon carbide-derived carbon layers. / Chun, Y. S layers were synthesized on silicon carbide with two

Oxidation of silicon, silicon carbide, and silicon nitride

2019-3-10 · Chlorine contamination accelerates the oxidation of silicon-based ceramics through the formation of volatile silicon chloride or silicon oxychloride species which degrade the protective character of the SiO[sub 2] film. Accelerated attack may occur by active corrosion or formation of bubbles in the

Etching of silicon carbide by chlorine - ScienceDirect

The reaction of Cl 2 with polycrystalline β-silicon carbide was studied by the modulated molecular beam-mass spectrometric detection method. The temperature range was 300–1000 K and beam intensities between 10 16 and 10 17 /cm 2 s were employed. The sole silicon-bearing gaseous product was SiCl 4, which was produced with a maximum reaction probability of 5 × 10-4 at 740 K.

Etching of Silicon Carbide Using Chlorine Trifluoride …

2012-10-16 · 2.1. Reactor and processes using chlorine trifluoride gas. In order to etch silicon carbide by chlorine trifluoride gas, the horizontal cold-wall reactor shown in Figure 1. is used.This reactor consists of a gas supply system, a quartz chaer and infrared lamps.

6n2 Tech Brief - Materials Service Guide - Thermowells

2011-1-20 · chlorine gas. Oxidation resistance to 1800°F. Operating temperatures to 1000°F. Nickel – Use in oxidizing atmospheres and sulfur free environments. Maximum operating temperature 1400°F. Tantalum – Good to excellent resistance to corrosion to most chemicals and a high heat conductivity. Most Stove dome Silicon carbide, LT-1

Kinetics of conversion of silicon carbide to carbide

Carbide derived carbon (CDC) was produced on SiC by reaction with flowing Ar–3.5% Cl 2 gas at 900 and 1000 °C. The thickness of the CDC layer increased with time during high temperature exposure according to a parabolic rate equation represented by K p = [2.48 × 10 −6 e −(165 000/RT)] m 2 s −1.Carbon loss due to the formation and spallation of graphitic powder was found to be

Conversion of silicon carbide to crystalline diamond

2001-5-17 · Thus, treatment of SiC in chlorine or chlorine-hydrogen mixtures at Cl 2 /H 2 ratios equal or larger than 2:1 at 1,000 °C results in the conversion of the silicon carbide to crystalline diamond

US5611955A - High resistivity silicon carbide …

A substrate for use in semiconductor devices, fabried of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected heavy metal, hydrogen, chlorine and fluorine. The selected heavy metal being a metal found in periodic

Corrosion characteristics of silicon carbide and silicon

2011-1-3 · Corrosion Characteristics of Silicon Carbide and Silicon Nitride Volume 98 Nuer 5 Septeer-October 1993 R. G. Munro and S. J. Dapkunas National Institute of Standards and Technology, Gaithersburg, MD 20899-0001 The present work is a review of the substantial effort that has been made to measure and understand the effects

Oxidation of Silicon, Silicon Carbide, and Silicon …

Chlorine contamination accelerates the oxidation of silicon-based ceramics through the formation of volatile silicon chloride or silicon oxychloride species which degrade the protective character of the SiO 2 film. Accelerated attack may occur by active corrosion or formation of bubbles in the oxide layer.

Oxidation of Silicon, Silicon Carbide, and Silicon …

Chlorine contamination accelerates the oxidation of silicon‐based ceramics through the formation of volatile silicon chloride or silicon oxychloride species which degrade the protective character of the SiO 2 film. Accelerated attack may occur by active corrosion or formation of bubbles in the oxide layer.

Silicon tetrachloride - Wikipedia

2019-4-18 · Silicon tetrachloride is prepared by the chlorination of various silicon compounds such as ferrosilicon, silicon carbide, or mixtures of silicon dioxide and carbon. The ferrosilicon route is most common. In the laboratory, SiCl 4 can be prepared by treating silicon with chlorine: Si + 2 Cl 2 → SiCl 4

Oxidation of Silicon, Silicon Carbide, and Silicon …

Chlorine contamination accelerates the oxidation of silicon‐based ceramics through the formation of volatile silicon chloride or silicon oxychloride species which degrade the protective character of the SiO 2 film. Accelerated attack may occur by active corrosion or formation of bubbles in the oxide layer.

Silicon-Carbon-Chlorine molecules - Engineering …

However, silicon and carbon can be bonded in conjunction with chlorine at more moderate temperatures, where the carbon atom is the part of an organic group (e.g., methyl, ethyl, phenyl). Silicon-carbon-chlorine bonded molecules do not occur naturally, are completely synthetic and are generically known as organo-chlorosilanes.

US Patent for Silicon carbide crystal growth in a CVD

A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chaer heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chaer utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and

Chlorinated silicon carbide CVD revisited for polycrystalline

2014-10-2 · Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth___ 9| Chlorinated silicon carbide CVD revisited for

Chlorinated silicon carbide CVD revisited for polycrystalline

2014-10-2 · Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth___ 9| Chlorinated silicon carbide CVD revisited for

Gas-phase modeling of chlorine-based chemical vapor

Chlorinated molecules with three chlorine atoms seem to be the most efficient and resulting in a uniform C/Si ratio along the susceptor coordinate. Further complexity in the process derives from the use of low temperatures, which affects not only the gas-phase composition but also the risk of gas-phase nucleation.

Related links