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metallurgical ultra high efficiency high power density thinned

Nano-magnetics for high efficiency power supplies

2015-5-19 · • Desired performance: high efficiency and power density • Advances in power switches & controllers, GaN, SiC… Motivation 3 There has been a significant focus on advancing the technology for power switches, controllers and drivers, mainly through development of wideband gap semiconductors processing technology including GaN and SiC.

Crystalline Si solar cells and the microelectronics

2008-12-16 · Concepts proposed for 3D-integration and eedding of thinned IC may have an advantage here. An entirely different pathway to work with very thin silicon layers is based on epitaxial solar cells, in which a thin (20μm) high-quality Si active layer is grown epitaxially on a low-cost Si carrier substrate (metallurgical grade or ribbon Si). A

Dr. Gérard Destéfanis Profile

Search the leading research in optics and photonics applied research from SPIE journals, conference proceedings and presentations, and eBooks

spsingh.ece | Indian Institute of Technology(BHU)

2019-4-10 · Bhagirath Sahu, Soni Singh, Manoj Kumar Meshram, Surya Pal Singh, “Integrated design of filtering antenna with high selectivity and improved performance for L-band appliions,” AEU- International Journal of Electronics and Communiions (Elsevier Publiion), Vol. 97, Deceer 2018, pp. 185-194. doi: 10.1016/j.aeue.2018.10.015; Accepted

Spectromètre haute définition (HDX) - IDIL Fibres …

Maya2000 Pro Spectrometers offer high sensitivity in configurations that cover a range of ~165-1100 nm. They are perfect for deep-UV (vacuum UV), UV-Vis and Vis-NIR measurements. This back-thinned 2D FFt-ccD spectrometer uses the Hamamatsu S10420 detector and is perfect for appliions that require higher quantum efficiency over a broader

Phase precipitation behavior and tensile properties of as-cast

2018-10-1 · : Trans. Nonferrous Met. Soc. China 28(2018) 1735−1744 Phase precipitation behavior and tensile properties of as-cast Ni-based superalloy during

Homogeneous Lithium Electrodeposition with …

2015-2-25 · For deposition rates up to 1.75 mA/cm2 optical micrographs indie that the deposit is uniform and non-dendritic. Above 1.75 mA/cm2, the deposit becomes dendritic and the efficiency decreases. High cycling efficiency (>99%) can also be obtained …

Powder Metallurgy | Keystone Capabilities in …

The part moves to the sintering furnace, which heats and cools the part at controlled temperatures to create the final metallurgical bond. A sintered, inspected part is ready for use, or it can undergo secondary operations. Ultra-High Density (UHD) The ultra-high density process results in higher impact resistance and better performance under load.

Peer Reviewed Journal

2017-6-3 · PLC Based Energy Management and Control Design for an Alternative Energy Power System with Improved Power Quality Y Jaganmohan Reddy, Y V Pavan Kumar, K Padma Raju, Anilkumar Ramsesh: 186-193: 35. Design And Development Of Small Wind Energy Systems Is A Soft Path For Power Generation And Environment Conservation For Off Grid Appliions In

Silicon and germanium nanowire electronics: physics …

2018-2-3 · Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional coination of the unique 1D electronic transport properties with the mature material know-how of …

Phase precipitation behavior and tensile properties of as-cast

2018-10-1 · : Trans. Nonferrous Met. Soc. China 28(2018) 1735−1744 Phase precipitation behavior and tensile properties of as-cast Ni-based superalloy during

US20100116329A1 - Methods of forming high …

Methods for forming solar cells include forming, over a substrate, a first junction comprising at least one III-V material and having a threading disloion density of less than approximately 10 7 cm −2 , and forming, over the first junction, a cap layer comprising silicon, …

Crystalline Si solar cells and the microelectronics

2009-8-26 · Concepts proposed for 3D-integration and eedding of thinned IC may have an advantage here. An entirely different pathway to work with very thin silicon layers is based on epitaxial solar cells, in which a thin (<20μm) high-quality Si active layer is grown epitaxially on a low-cost Si carrier substrate (metallurgical grade or ribbon Si).

Ultra-thin Chip Technology and Appliions

2019-4-13 · Silicon-on-insulator (SOI) is a wafer substrate technology with potential to fabrie ultra-thin silicon layers and thus ultra-thin chips. The high cost of SOI wafers and technical difficulties to derive ultra-thin chips from SOI substrates so far have hindered the industrial exploitation of SOI technology for thin chip manufacturing.

US Patent Appliion for LOW-COST MULTI …

The base silicon wafers for the solar cells are made by thermally decomposing hazardous gases containing Si—H—Cl, such a di-chlorosilane and tri-chlorosilane, to produce ultra-high purity polysilicon, generally referred to as nine nines, i.e., 99.9999999% pure. These gases are …

EP2208238B1 - Low-cost solar cells and methods for …

EP2208238B1 EP08846509.1A EP08846509A EP2208238B1 EP 2208238 B1 EP2208238 B1 EP 2208238B1 EP 08846509 A EP08846509 A EP 08846509A EP 2208238 B1 EP2208238 B1 EP 2208238B1 Authority EP European Patent Office Prior art keywords layer substrate thin contact doped Prior art date 2007-11-09 Legal status (The legal status is an assumption and is not a legal conclusion.

Studies on the Reliability of Ni-Gate Aluminum …

2014-4-18 · page 1 1 studies on the reliability of ni gate aluminum gallium nitride / gallium nitride high electron mobility transistors using chemical deprocessing by patrick guzek whiting a dissertation presented to the graduate school of the university of florida in partial fulfillment of the requirements for the degree of doctor of philosophy university of florida 2013

US7951640B2 - Low-cost multi-junction solar cells and

The resulting thin film device structure on the metallurgical silicon substrate has a PV efficiency that is about twice greater than that for conventional thin-film solar cells, thanks to an order of magnitude longer minority carrier diffusion lengths in the metallurgical silicon substrate.

Phase transformation strengthening of high …

2016-11-22 · The relentless drive for energy efficiency in power generation and propulsion places development of high-performance materials at the forefront of materials science.

Crystalline Si solar cells and the microelectronics

2009-8-26 · Concepts proposed for 3D-integration and eedding of thinned IC may have an advantage here. An entirely different pathway to work with very thin silicon layers is based on epitaxial solar cells, in which a thin (<20μm) high-quality Si active layer is grown epitaxially on a low-cost Si carrier substrate (metallurgical grade or ribbon Si).

High-efficiency, thin-film GaAs solar cells (Journal

2019-4-7 · Abstract. The present research is directed toward demonstrating the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratio by organo-metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates.

kfy.hust.edu.cn

2012-6-6 · Power control of directly-driven wind generation systems with battery/ultra-capacitor hybrid energy Electric Power Security and High Efficiency Laboratory, Huazhong

ULTRA-HIGH EFFICIENCY HIGH POWER DENSITY …

2019-1-9 · ULTRA-HIGH EFFICIENCY HIGH POWER DENSITY THINNED-DOWN SILICON CARBIDE BETAVOLTAICS Steven Tin and Amit Lal SonicMEMS Laboratory, School of Electrical and Computer Engineering, Cornell University Ithaca, NY, USA 14853 Abstract: We report on the demonstration of a one-sided exposure 11.2% ultra-high efficiency 50µm-thick thinned-down silicon carbide betavoltaic …

EP2208238B1 - Low-cost solar cells and methods for …

EP2208238B1 EP08846509.1A EP08846509A EP2208238B1 EP 2208238 B1 EP2208238 B1 EP 2208238B1 EP 08846509 A EP08846509 A EP 08846509A EP 2208238 B1 EP2208238 B1 EP 2208238B1 Authority EP European Patent Office Prior art keywords layer substrate thin contact doped Prior art date 2007-11-09 Legal status (The legal status is an assumption and is not a legal conclusion.

Chin. Phys. B

2018-10-17 · Chin. Phys. B 2015, 24 (11): 117406 Electrochemical method has been used to insert K/Na into FeSe lattice to prepare alkali-intercalated iron selenides at room temperature. Magnetization measurement reveals that KxFe2Se2 and NaxFe2Se2 are superconductive at 31 K and 46 K, respectively. This is the first successful report of obtaining

Acronyms and Abbreviations - cdiac.ess-dive.lbl.gov

Carbon Dioxide Information Analysis Center. NOTICE (March 2018): This website provides access to the CDIAC archive data temporarily. It will be gradually transitioned into data packages in the new ESS-DIVE archive.This site will continue to operate in parallel during and …

Homogeneous Lithium Electrodeposition with …

2015-2-25 · For deposition rates up to 1.75 mA/cm2 optical micrographs indie that the deposit is uniform and non-dendritic. Above 1.75 mA/cm2, the deposit becomes dendritic and the efficiency decreases. High cycling efficiency (>99%) can also be obtained …

NASA SBIR/STTR 2019 Program Solicitation Details

High power density/high efficiency modular power electronics and associated drivers for switching elements. Non-traditional approaches to switching devices, such as addition of graphene and carbon nanotubes to material. Materials for lightweight, flexible, low voltage (less than 5 volts) power …

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